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Increase in emission current after high-frequency low-voltage pulse application observed for nano-pillar cathodeYOSHIDA, Tomoya; BABA, Akiyoshi; ASANO, Tanemasa et al.International Vacuum Nanoelectronics Conference. 2004, pp 258-259, isbn 0-7803-8397-4, 1Vol, 2 p.Conference Paper
Stable and high emission current from carbon nanotube paste with spin on glassPARK, Jae-Hong; MOON, Jin-San; HAN, Jae-Hee et al.International Vacuum Nanoelectronics Conference. 2004, pp 74-75, isbn 0-7803-8397-4, 1Vol, 2 p.Conference Paper
A 20mΩcm2 600 V-class superjunction MOSFETSAITO, Wataru; OMURA, Ichiro; AIDA, Satoshi et al.International Symposium on Power Semiconductor Devices & ICs. 2004, pp 459-462, isbn 4-88686-060-5, 4 p.Conference Paper
Study of the possibility of increasing the nominal current of high-current shunting switches using a computerSHALAGINOV, A. A.Soviet chemical industry. 1992, Vol 24, Num 1, pp 61-65, issn 0038-5344Article
High current gain InGaN/GaN HBTs with 300°C operating temperatureKEOGH, D. M; ASBECK, P. M; CHUNG, T et al.Electronics Letters. 2006, Vol 42, Num 11, pp 661-663, issn 0013-5194, 3 p.Article
Novel mask inspection flow for better defect review and analysisLIM, Kwon; JIN HYUNG PARK; DONG HOON CHUNG et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, issn 0277-786X, isbn 0-8194-6358-2, vol 1, 62830Z.1-62830Z.9Conference Paper
High current density nanofilament cathodes for microwave amplifiersSCHNELL, J.-P; MINOUX, E; LACERDA, R et al.International Vacuum Nanoelectronics Conference. 2004, pp 278-279, isbn 0-7803-8397-4, 1Vol, 2 p.Conference Paper
Feasibility study on large-scale, high current density superconductor by dynamic stabilization. II: Stability marginOGASAWARA, T.Cryogenics (Guildford). 1987, Vol 27, Num 12, pp 678-681, issn 0011-2275Article
Low-power high-speed current comparator designBANKS, D; TOUMAZOU, C.Electronics Letters. 2008, Vol 44, Num 3, pp 171-172, issn 0013-5194, 2 p.Article
Transport of long-pulse, high-current electron beams in preformed monatomic plasma channels in the ion focus regimeMILLER, J. D; GILGENBACH, R. M.IEEE transactions on plasma science. 1990, Vol 18, Num 3, pp 658-663, issn 0093-3813Article
Identifying electrical mechanisms responsible for functional failures during harsh external ESD and EMC aggressionBESSE, P; ABOUDA, K; ABOUDA, C et al.Microelectronics and reliability. 2011, Vol 51, Num 9-11, pp 1597-1601, issn 0026-2714, 5 p.Conference Paper
Charging control on high energy implanters : A process requirement demonstrated by plasma damage monitoringCANTIN, C; LAVIRON, C; GOVE, G et al.Microelectronics and reliability. 2009, Vol 49, Num 2, pp 209-214, issn 0026-2714, 6 p.Article
Temperature measurement on series resistance and devices in power packs based on on-state voltage drop monitoring at high currentPERPINA, X; SERVIERE, J. F; SAIZ, J et al.Microelectronics and reliability. 2006, Vol 46, Num 9-11, pp 1834-1839, issn 0026-2714, 6 p.Conference Paper
The temperature dependence of breakdown voltage and on-resistance of LDMOS'sROFAIL, S. S; CHAUDHRY, M. A.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 4, pp 933-934, issn 0018-9383Article
A design for robust wide metal tracksACKERMANN, M; HEIN, V; KOVACS, C et al.Microelectronics and reliability. 2012, Vol 52, Num 9-10, pp 2447-2451, issn 0026-2714, 5 p.Conference Paper
Effect of aluminum doping on electrical and dielectric aging behavior against current impulse of ZPCCY-based varistorsNAHM, Choon-Woo.Journal of materials science. Materials in electronics. 2011, Vol 22, Num 1, pp 77-83, issn 0957-4522, 7 p.Article
A dedicated TLP set-up to investigate the ESD robustness of RF elements and circuitsWOLF, Heinrich; GIESER, Horst; SOLDNER, Wolfgang et al.Microelectronics and reliability. 2005, Vol 45, Num 9-11, pp 1421-1424, issn 0026-2714, 4 p.Conference Paper
Analysis of high DC current gain structures for GaN/InGaN/GaN HBTsLI, James C; KEOGH, David M; RAYCHAUDHURI, Sourobh et al.IEEE Lester Eastman conference on high performance devices. 2004, pp 201-206, isbn 981-256-196-X, 1Vol, 6 p.Conference Paper
High current, high current density field emitter array cathodesSCHWOEBEL, P. R; SPINDT, C. A; HOLLAND, C. E et al.International Vacuum Nanoelectronics Conference. 2004, isbn 0-7803-8397-4, 1Vol, p. 232Conference Paper
Influence of technological factors on TIL GATTs performanceSILARD, A; TURTUDAU, F; MARGARIT, M et al.Revue roumaine des sciences techniques. Electrotechnique et énergétique. 1987, Vol 32, Num 2, pp 205-209, issn 0035-4066Article
High-Current-Drive Dual-Gate a-IGZO TFT With Nanometer Dotlike DopingLIAO, Chun-Hung; LI, Chang-Hung; ZAN, Hsiao-Wen et al.IEEE electron device letters. 2013, Vol 34, Num 10, pp 1274-1276, issn 0741-3106, 3 p.Article
Zero-Mask Contact Fuse for One-Time-Programmable Memory in Standard CMOS ProcessesMIN SHI; JIN HE; WEN WU et al.IEEE electron device letters. 2011, Vol 32, Num 7, pp 955-957, issn 0741-3106, 3 p.Article
Magnetic field spatial Fourier analysis: A new opportunity for high resolution current localizationINFANTE, F; PERDU, P; KOR, H. B et al.Microelectronics and reliability. 2011, Vol 51, Num 9-11, pp 1684-1688, issn 0026-2714, 5 p.Conference Paper
The Magnet System of the BEPCII Interaction RegionWU, Y. Z; YU, C. H; CHEN, F. S et al.IEEE transactions on applied superconductivity. 2010, Vol 20, Num 3, pp 360-363, issn 1051-8223, 4 p.Conference Paper
Development of High-Current Sheet Beam Cathodes for Terahertz Sources : VACUUM ELECTRON DEVICESLILI LI; YIMAN WANG; WEI LIU et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 5, pp 762-768, issn 0018-9383, 7 p.Article